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Moir\'e edge states in twisted graphene nanoribbons

机译:moir的边缘状态在扭曲的石墨烯纳米带中

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摘要

The edge physics of graphene based systems is well known to be highlysensitive to the atomic structure at the boundary, with localized zero modeedge states found only on the zigzag type termination of the lattice. Here wedemonstrate that the graphene twist bilayer supports an additional class ofedge states, that (i) are found for all edge geometries and thus are robustagainst edge roughness, (ii) occur at energies coinciding with twist inducedvan Hove singularities in the bulk and (iii) possess an electron densitystrongly modulated by the moir\'e lattice. Interestingly, these "moir\'e edgestates" exist only for certain lattice commensurations and thus the edgephysics of the twist bilayer is, in dramatic contrast to that of the bulk, notuniquely determined by the twist angle.
机译:众所周知,基于石墨烯的系统的边缘物理学对边界处的原子结构高度敏感,仅在晶格的之字形终止处发现局部零弱化边缘状态。在这里我们证明了石墨烯扭曲双层支持另外一类边缘状态,即(i)对于所有边缘几何形状都存在,因此相对于边缘粗糙度而言是稳健的;(ii)出现在与扭曲引起的van Hove奇异性一致的能量上;以及具有由莫尔晶格强烈调节的电子密度。有趣的是,这些“莫尔边缘状态”仅对于某些晶格共存才存在,因此,与本体的扭曲形成鲜明对比的是,扭曲双层的边缘物理特性并非唯一地由扭曲角确定。

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